ZXMN3A04DN8TC

Specifications

Vgsth Max Id

1V @ 250μA (Min)

Akım Değeri

6.8A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Max Power Dissipation

1.25W

Terminal Kaplaması

MATTE TIN

Transistor Element Material

SILICON

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Voltage Rated Dc

30V

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

1890pF @ 15V

Qualification Status

Not Qualified

Power Max

1.81W

Fall Time Typ

6.1 ns

Turn On Delay Time

5.2 ns

Parça Durumu

Obsolete

Weight

73.992255mg

Pin Sayısı

8

Number Of Elements

2

Gate Charge Qg Max Vgs

36.8nC @ 10V

Rise Time

6.1ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Rds On Max Id Vgs

20m Ω @ 12.6A, 10V

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2012

Tepe Reflow Süresi (maks. sn)

40

Montaj Tipi

Surface Mount

Turn Off Delay Time

38.1 ns

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

RoHS Compliant

Terminal Formu

GULL WING

Power Dissipation

1.25W

Fet Feature

Logic Level Gate

Montaj

Surface Mount

Continuous Drain Current Id

6.5A