ZXMN10A08DN8TC

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Continuous Drain Current Id

1.6A

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2006

RoHS Durumu

RoHS Compliant

Drainsource On Resistancemax

0.25Ohm

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

250m Ω @ 3.2A, 10V

Parça Durumu

Obsolete

Number Of Elements

1

Pin Sayısı

8

Jesd30 Code

R-PDSO-G8

Gate Charge Qg Max Vgs

7.7nC @ 10V

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Drain To Source Voltage Vdss

100V

Max Power Dissipation

1.25W

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

8

Kurşunsuz

Lead Free

Voltage Rated Dc

100V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

405pF @ 50V

Pulsed Drain Currentmax Idm

9A

Vgsth Max Id

2V @ 250μA (Min)

Akım Değeri

2.1A

Fet Type

2 N-Channel (Dual)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)