ZXMN10A08DN8TA

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

40

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Rds On Max Id Vgs

250m Ω @ 3.2A, 10V

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

100V

Continuous Drain Current Id

2.1A

Power Dissipation

1.8W

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Max Power Dissipation

1.8W

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Akım Değeri

2.1A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Pulsed Drain Currentmax Idm

9A

Weight

73.992255mg

Current Continuous Drain Id25

1.6A

Fabrika Tedarik Süresi

17 Weeks

Rise Time

2.2ns

Parça Durumu

Active

Turn On Delay Time

3.4 ns

Fall Time Typ

2.2 ns

Turn Off Delay Time

8 ns

Direnç

250mOhm

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Number Of Channels

2

Configuration

SINGLE WITH BUILT-IN DIODE