ZXMHC10A07N8TC

Specifications

Fet Type

2 N and 2 P-Channel (H-Bridge)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

100V

Max Power Dissipation

870mW

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

DUAL

Fall Time Typ

3.3 ns

Parça Durumu

Active

Turn On Delay Time

1.6 ns

Current Continuous Drain Id25

800mA 680mA

Weight

73.992255mg

Rise Time

2.1ns

Fabrika Tedarik Süresi

17 Weeks

ECCN Kodu

EAR99

Rds On Max Id Vgs

700m Ω @ 1.5A, 10V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Drain Currentmax Abs Id

1A

Yayın Yılı

2009

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.7Ohm

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation

1.36W

Fet Feature

Standard

Continuous Drain Current Id

1A

Drain To Source Breakdown Voltage

-100V

JESD-609 Kodu

e3

Vgsth Max Id

4V @ 250μA

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm

Terminal Sayısı

8

Kurşunsuz

Lead Free

Genişlik

4mm

Yükseklik

1.5mm