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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 8
- Transistor Element Material
- SILICON
- Uzunluk
- 3.1mm
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 870mW
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 290pF @ 25V
- Yükseklik
- 950μm
- Voltage Rated Dc
- 30V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Genişlik
- 3.1mm
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 1V @ 250μA (Min)
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fet Type
- 2 N-Channel (Dual)
- Akım Değeri
- 2.4A
- Turn On Delay Time
- 2.5 ns
- Parça Durumu
- Obsolete
- Gate Charge Qg Max Vgs
- 8nC @ 10V
- Rise Time
- 4.1ns
- Weight
- 139.989945mg
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Reference Standard
- AEC-Q101
- REACH Uyumluluk Kodu
- unknown
- Power Max
- 1.04W
- Fall Time Typ
- 4.1 ns
- Yayın Yılı
- 2006
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- RoHS Compliant
- Drainsource On Resistancemax
- 0.135Ohm
- Turn Off Delay Time
- 9.6 ns
- Rds On Max Id Vgs
- 135m Ω @ 1.7A, 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Number Of Channels
- 2
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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