ZXMC6A09DN8TA

Specifications

Parça Durumu

Active

Turn On Delay Time

4.6 ns

Current Continuous Drain Id25

3.9A 3.7A

Weight

73.992255mg

Rise Time

5.8ns

Fabrika Tedarik Süresi

17 Weeks

Fall Time Typ

23 ns

Terminal Kaplaması

Matte Tin (Sn)

Max Power Dissipation

2.1W

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Akım Değeri

5.1A

Fet Type

N and P-Channel

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Breakdown Voltage

60V

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Power Dissipation

2.1W

Continuous Drain Current Id

5.1A

Additional Feature

LOW THRESHOLD

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2006

Drain Currentmax Abs Id

3.9A

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Rds On Max Id Vgs

45m Ω @ 8.2A, 10V

Number Of Elements

2

Pin Sayısı

8

Gate Charge Qg Max Vgs

24.2nC @ 10V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Max

1.8W

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm