ZXMC4559DN8TC

Specifications

Continuous Drain Current Id

2.6A

Fet Feature

Logic Level Gate

Power Dissipation

2.1W

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-60V

ECCN Kodu

EAR99

Rds On Max Id Vgs

55m Ω @ 4.5A, 10V

Threshold Voltage

-1V

Tepe Reflow Sıcaklığı (°C)

260

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.055Ohm

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2006

Drain Currentmax Abs Id

3.6A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Fall Time Typ

10 ns

Current Continuous Drain Id25

3.6A 2.6A

Fabrika Tedarik Süresi

12 Weeks

Rise Time

4.1ns

Parça Durumu

Active

Turn On Delay Time

3.5 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

N and P-Channel

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

60V

Max Power Dissipation

1.25W

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Montaj

Surface Mount

Terminal Formu

GULL WING

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Turn Off Delay Time

35 ns