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Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 20.4nC @ 10V
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Element Configuration
- Dual
- Power Max
- 1.25W
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Input Capacitance Ciss Max Vds
- 1063pF @ 30V
- Yükseklik
- 1.5mm
- Genişlik
- 4mm
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 8
- Uzunluk
- 5mm
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 1V @ 250μA (Min)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Terminal
- SMD/SMT
- Number Of Channels
- 2
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Direnç
- 105mOhm
- Turn Off Delay Time
- 35 ns
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 17 Weeks
- Rise Time
- 4.1ns
- Weight
- 73.992255mg
- Current Continuous Drain Id25
- 3.6A 2.6A
- Turn On Delay Time
- 3.5 ns
- Parça Durumu
- Active
- Fall Time Typ
- 10 ns
- Dual Supply Voltage
- 60V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 2.1W
- Terminal Kaplaması
- Matte Tin (Sn)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
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