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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Logic Level Gate, 4.5V Drive
- Power Dissipation
- 2.1W
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 4.9A
- Montaj
- Surface Mount
- Drain To Source Breakdown Voltage
- -30V
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 24m Ω @ 7A, 10V
- ECCN Kodu
- EAR99
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2008
- Drain Currentmax Abs Id
- 5.7A
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Turn Off Delay Time
- 30 ns
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Fall Time Typ
- 21 ns
- Parça Durumu
- Active
- Turn On Delay Time
- 1.9 ns
- Rise Time
- 3ns
- Gate Charge Qg Max Vgs
- 12.9nC @ 10V
- Fabrika Tedarik Süresi
- 17 Weeks
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 6.8A 4.9A
- Vgsth Max Id
- 3V @ 250μA
- Fet Type
- N and P-Channel
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 8
- Terminal Kaplaması
- Matte Tin (Sn)
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