ZXMC3AM832TA

Specifications

Gate To Source Voltage Vgs

20V

Genişlik

2mm

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

Yükseklik

1mm

Input Capacitance Ciss Max Vds

190pF @ 25V

Transistor Application

SWITCHING

Max Power Dissipation

1.7W

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

8

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Uzunluk

3mm

Kılıf / Paket

8-VDFN Exposed Pad

Fet Type

N and P-Channel

Vgsth Max Id

1V @ 250μA (Min)

Pin Sayısı

8

Weight

299.994654mg

Current Continuous Drain Id25

2.9A 2.1A

Number Of Elements

2

Gate Charge Qg Max Vgs

3.9nC @ 10V

Rise Time

2.8ns

Parça Durumu

Obsolete

Turn On Delay Time

1.5 ns

Fall Time Typ

7.5 ns

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Turn Off Delay Time

11.3 ns

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

3.7A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Rds On Max Id Vgs

120m Ω @ 2.5A, 10V

JESD-609 Kodu

e3

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)