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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 2.1W
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Type
- N and P-Channel
- Akım Değeri
- 6.4A
- Turn On Delay Time
- 3 ns
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 17 Weeks
- Rise Time
- 6.4ns
- Weight
- 73.992255mg
- Current Continuous Drain Id25
- 4.9A 4.1A
- Fall Time Typ
- 9.4 ns
- Drain Currentmax Abs Id
- 4.9A
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 35m Ω @ 9A, 10V
- Threshold Voltage
- 1V
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Power Dissipation
- 2.1W
- Fet Feature
- Logic Level Gate
- Additional Feature
- LOW THRESHOLD
- Continuous Drain Current Id
- 6.4A
- Terminal Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 5mm
- Yükseklik
- 1.5mm
- Input Capacitance Ciss Max Vds
- 796pF @ 25V
- Voltage Rated Dc
- 30V
- Genişlik
- 4mm
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