ZXMC10A816N8TC

Specifications

Fall Time Typ

12 ns

Turn On Delay Time

4.3 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

17 Weeks

Rise Time

5.2ns

Weight

73.992255mg

Pulsed Drain Currentmax Idm

9.4A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

N and P-Channel

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

100V

Max Power Dissipation

1.8W

Terminal Kaplaması

Matte Tin (Sn)

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Fet Feature

Logic Level Gate

Power Dissipation

2.1W

Continuous Drain Current Id

2A

Drain To Source Breakdown Voltage

100V

JESD-609 Kodu

e3

Rds On Max Id Vgs

230m Ω @ 1A, 10V

ECCN Kodu

EAR99

Drain Currentmax Abs Id

1.7A

Yayın Yılı

2005

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Gate Charge Qg Max Vgs

9.2nC @ 10V

Pin Sayısı

8

Number Of Elements

2

Vgsth Max Id

2.4V @ 250μA

Terminal Sayısı

8

Uzunluk

4.95mm

Operating Mode

ENHANCEMENT MODE