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C3 ChipZentronix
ZTD09N50DE6QTA

Diodes Incorporated

ZTD09N50DE6QTA

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.20
  • 10+ pcs$1.14
  • 100+ pcs$1.07
  • 500+ pcs$1.01

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RoHS

Compliant

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Specifications

Terminal Sayısı
6
Current Collector Cutoff Max
10nA
Transition Frequency
215MHz
RoHS Durumu
ROHS3 Compliant
Frequency Transition
215MHz
Collectoremitter Breakdown Voltage
50V
Montaj
Surface Mount
Polaritychannel Type
NPN
Vce Saturation Max Ib Ic
270mV @ 50mA, 1A
Fabrika Tedarik Süresi
12 Weeks
Transistor Element Material
SILICON
Configuration
SEPARATE, 2 ELEMENTS
Terminal Formu
GULL WING
Kılıf / Paket
SOT-23-6
Ambalaj
Tape & Reel (TR)
Reference Standard
AEC-Q101
Dc Current Gain Hfe Min Ic Vce
200 @ 500mA 2V
Terminal Kaplaması
Matte Tin (Sn)
Max Collector Current
1A
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
260
Tepe Reflow Süresi (maks. sn)
40
JESD-609 Kodu
e3
Power Max
1.1W
Parça Durumu
Active
Transistor Application
SWITCHING
Transistor Type
2 NPN (Dual)
Montaj Tipi
Surface Mount
Yayın Yılı
2011
Max Power Dissipation
1.1W
Collector Emitter Voltage Vceo
270mV
Jesd30 Code
R-PDSO-G6
Additional Feature
HIGH RELIABILITY
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
2

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