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ULN2004AD16-U

Diodes Incorporated

ULN2004AD16-U

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-40°C~105°C TA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Polaritychannel Type
NPN
Terminal Pozisyonu
DUAL
Current Collector Cutoff Max
50μA
Transistor Element Material
SILICON
Kılıf / Paket
16-DIP (0.300, 7.62mm)
Collector Emitter Voltage Vceo
1.6V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Vce Saturation Max Ib Ic
1.6V @ 500μA, 350mA
Fabrika Tedarik Süresi
25 Weeks
Transistor Application
SWITCHING
Configuration
COMPLEX
Montaj
Through Hole
Terminal Sayısı
16
Terminal Kaplaması
Matte Tin (Sn)
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Number Of Elements
7
Ambalaj
Tube
Jesd30 Code
R-PDIP-T16
Transistor Type
7 NPN Darlington
Max Collector Current
500mA
Parça Durumu
Active
JESD-609 Kodu
e3
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2015

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