Volume pricing
- 1+ pcs$0.14
- 10+ pcs$0.14
- 100+ pcs$0.13
- 500+ pcs$0.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 50MHz
- Fabrika Tedarik Süresi
- 19 Weeks
- Number Of Elements
- 2
- Collector Emitter Voltage Vceo
- 300V
- Max Power Dissipation
- 300mW
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 30mA 10V
- Transistor Application
- SWITCHING
- Max Breakdown Voltage
- 300V
- Gain Bandwidth Product
- 50MHz
- Element Configuration
- Dual
- Collector Base Voltage Vcbo
- 300V
- Yükseklik
- 1.1mm
- Pin Sayısı
- 6
- Collectoremitter Breakdown Voltage
- 300V
- Hfemin
- 25
- Terminal Kaplaması
- Matte Tin (Sn)
- JESD-609 Kodu
- e3
- Uzunluk
- 3mm
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Frekans
- 50MHz
- Transistor Type
- 2 NPN (Dual)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2007
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Terminal Formu
- GULL WING
- Max Collector Current
- 500mA
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Weight
- 29.993795mg
- Polarity
- NPN
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Current Collector Cutoff Max
- 100nA ICBO
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