Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 2.2mm
- Akım Değeri
- 200mA
- Transistor Type
- NPN, PNP
- Yayın Yılı
- 2007
- Voltage Rated Dc
- 160V
- Max Power Dissipation
- 200mW
- Max Breakdown Voltage
- 150V
- Collector Base Voltage Vcbo
- 180V
- Terminal Kaplaması
- Matte Tin (Sn)
- Hfemin
- 60
- Voltage Collector Emitter Breakdown Max
- 160V 150V
- Current Collector Cutoff Max
- 50nA ICBO
- Genişlik
- 1.35mm
- Temel Parça No
- MMDT5451
- Tepe Reflow Sıcaklığı (°C)
- 260
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Weight
- 6.010099mg
- Polarity
- NPN, PNP
- JESD-609 Kodu
- e3
- Collectoremitter Saturation Voltage
- 200mV
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 30
- Transition Frequency
- 100MHz
- Collector Emitter Voltage Vceo
- 200mV
- Number Of Elements
- 2
- Reach Svhc
- No SVHC
- Continuous Collector Current
- -200mA
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V / 60 @ 10mA 5V
- Gain Bandwidth Product
- 300MHz
- Element Configuration
- Dual
- Collectoremitter Breakdown Voltage
- 150V
- Yükseklik
- 1mm
- Pin Sayısı
- 6
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
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