Volume pricing
- 1+ pcs$0.18
- 10+ pcs$0.17
- 100+ pcs$0.16
- 500+ pcs$0.15
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 25V
- Max Power Dissipation
- 200mW
- Collector Base Voltage Vcbo
- -25V
- Terminal Kaplaması
- Tin/Lead (Sn85Pb15)
- Hfemin
- 100
- REACH Uyumluluk Kodu
- not_compliant
- Akım Değeri
- -200mA
- Uzunluk
- 2.2mm
- Transistor Type
- 2 PNP (Dual)
- Voltage Rated Dc
- -25V
- Yayın Yılı
- 2003
- Transistor Element Material
- SILICON
- RoHS Durumu
- Non-RoHS Compliant
- Polarity
- PNP
- Weight
- 6.010099mg
- Current Collector Cutoff Max
- 50nA ICBO
- Genişlik
- 1.35mm
- Temel Parça No
- MMDT4126
- Tepe Reflow Sıcaklığı (°C)
- 235
- Collector Emitter Voltage Vceo
- 400mV
- Number Of Elements
- 2
- Transition Frequency
- 250MHz
- Transistor Application
- SWITCHING
- Continuous Collector Current
- -200mA
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA 1V
- Reach Svhc
- No SVHC
- Element Configuration
- Dual
- Gain Bandwidth Product
- 250MHz
- Collectoremitter Breakdown Voltage
- 25V
- Pin Sayısı
- 6
- Yükseklik
- 1mm
- JESD-609 Kodu
- e0
- Power Max
- 200mW
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- Collectoremitter Saturation Voltage
- -400mV
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- ECCN Kodu
- EAR99
- Max Collector Current
- 200mA
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