Volume pricing
- 1+ pcs$0.08
- 10+ pcs$0.08
- 100+ pcs$0.07
- 500+ pcs$0.07
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 200mA
- Uzunluk
- 2.2mm
- Yayın Yılı
- 2007
- Voltage Rated Dc
- 25V
- Transistor Type
- 2 NPN (Dual)
- Max Breakdown Voltage
- 25V
- Max Power Dissipation
- 200mW
- Hfemin
- 120
- Collector Base Voltage Vcbo
- 30V
- Additional Feature
- HIGH RELIABILITY
- Current Collector Cutoff Max
- 50nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- MMDT4124
- Terminal
- SMD/SMT
- Genişlik
- 1.35mm
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Polarity
- NPN
- Kurşunsuz Kodu
- yes
- Weight
- 6.010099mg
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 50mA
- Collectoremitter Saturation Voltage
- 300mV
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- ECCN Kodu
- EAR99
- Frekans
- 300MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Collector Current
- 200mA
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA 1V
- Reach Svhc
- No SVHC
- Collector Emitter Voltage Vceo
- 25V
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 15 Weeks
- Contact Plating
- Tin
- Transition Frequency
- 300MHz
- Collectoremitter Breakdown Voltage
- 25V
- Pin Sayısı
- 6
- Yükseklik
- 1mm
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