MMDT3946FL3-7

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Type

NPN, PNP Complementary

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2016

ECCN Kodu

EAR99

JESD-609 Kodu

e4

Power Max

370mW

Configuration

SEPARATE, 2 ELEMENTS

Vce Saturation Max Ib Ic

300mV @ 5mA, 50mA

Terminal Pozisyonu

DUAL

Case Connection

COLLECTOR

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Pin Sayısı

6

Collectoremitter Breakdown Voltage

40V

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

2

Collector Emitter Voltage Vceo

300mV

Transition Frequency

300MHz

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 1V

Transistor Application

SWITCHING

Max Breakdown Voltage

40V

Max Power Dissipation

370mW

Kılıf / Paket

6-XFDFN Exposed Pad

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Turn On Timemax Ton

70ns

Current Collector Cutoff Max

50nA

Turn Off Timemax Toff

250ns

Reference Standard

AEC-Q101

Polaritychannel Type

NPN AND PNP

Parça Durumu

Active

Frequency Transition

300MHz

Terminal Formu

NO LEAD

Max Collector Current

200mA

Terminal Sayısı

6

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant