Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN, PNP
- Yayın Yılı
- 2007
- Voltage Rated Dc
- 40V
- Akım Değeri
- 200mA
- Uzunluk
- 2.2mm
- Collector Base Voltage Vcbo
- 60V
- Terminal Kaplaması
- Tin/Lead (Sn85Pb15)
- Hfemin
- 100
- REACH Uyumluluk Kodu
- not_compliant
- Max Breakdown Voltage
- 40V
- Max Power Dissipation
- 200mW
- Genişlik
- 1.35mm
- Tepe Reflow Sıcaklığı (°C)
- 235
- Temel Parça No
- MMDT3946
- Turn On Timemax Ton
- 70ns
- Turn Off Timemax Toff
- 250ns
- Polarity
- NPN, PNP
- Weight
- 6.010099mg
- Transistor Element Material
- SILICON
- RoHS Durumu
- Non-RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e0
- Collectoremitter Saturation Voltage
- 300mV
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
- Element Configuration
- Dual
- Gain Bandwidth Product
- 300MHz
- Collectoremitter Breakdown Voltage
- 40V
- Yükseklik
- 1mm
- Pin Sayısı
- 6
- Collector Emitter Voltage Vceo
- 300mV
- Number Of Elements
- 2
- Transition Frequency
- 300MHz
- Continuous Collector Current
- 200mA
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 10mA 1V
- Reach Svhc
- No SVHC
- Emitter Base Voltage Vebo
- 6V
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