Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 150mW
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 10mA 1V
- Transition Frequency
- 250MHz
- Collector Emitter Voltage Vceo
- 40V
- Fabrika Tedarik Süresi
- 26 Weeks
- Number Of Elements
- 2
- Collectoremitter Breakdown Voltage
- 40V
- Yükseklik
- 600μm
- Pin Sayısı
- 6
- Terminal Kaplaması
- Matte Tin (Sn)
- Hfemin
- 60
- Gain Bandwidth Product
- 250MHz
- Collector Base Voltage Vcbo
- 40V
- Element Configuration
- Dual
- Uzunluk
- 1.6mm
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2005
- Tepe Reflow Süresi (maks. sn)
- 40
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Frekans
- 250MHz
- Transistor Type
- 2 PNP (Dual)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 6
- Terminal Sayısı
- 6
- Max Collector Current
- 200mA
- Terminal Formu
- FLAT
- Kurşunsuz
- Lead Free
- Weight
- 3.005049mg
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Polarity
- PNP
- Turn Off Timemax Toff
- 300ns
- Additional Feature
- HIGH RELIABILITY
- Turn On Timemax Ton
- 70ns
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