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C3 ChipZentronix
MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Max Collector Current
600mA
Terminal Formu
GULL WING
Terminal Sayısı
6
Parça Durumu
Active
Frequency Transition
200MHz
Polaritychannel Type
PNP
Reference Standard
AEC-Q101
Turn On Timemax Ton
45ns
Additional Feature
HIGH RELIABILITY
Current Collector Cutoff Max
10nA ICBO
Turn Off Timemax Toff
100ns
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Transistor Application
SWITCHING
Max Breakdown Voltage
60V
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 10V
Max Power Dissipation
200mW
Collector Emitter Voltage Vceo
1.6V
Fabrika Tedarik Süresi
16 Weeks
Number Of Elements
2
Transition Frequency
200MHz
Terminal Kaplaması
Matte Tin (Sn)
Collectoremitter Breakdown Voltage
60V
Pin Sayısı
6
Vce Saturation Max Ib Ic
1.6V @ 50mA, 500mA
Configuration
SEPARATE, 2 ELEMENTS
JESD-609 Kodu
e3
Power Max
200mW
Yayın Yılı
2009
Tepe Reflow Süresi (maks. sn)
30
ECCN Kodu
EAR99
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
2 PNP (Dual)
Çalışma Sıcaklığı
-55°C~150°C TJ

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