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MMDT2227-7

Diodes Incorporated

MMDT2227-7

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.41
  • 10+ pcs$0.38
  • 100+ pcs$0.36
  • 500+ pcs$0.34

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RoHS

Compliant

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Specifications

Transistor Type
NPN, PNP
Voltage Rated Dc
40V
Yayın Yılı
2005
Uzunluk
2.2mm
Akım Değeri
600mA
Collector Base Voltage Vcbo
75V
REACH Uyumluluk Kodu
not_compliant
Terminal Kaplaması
Tin/Lead (Sn85Pb15)
Hfemin
100
Max Power Dissipation
200mW
Max Breakdown Voltage
60V
Genişlik
1.35mm
Temel Parça No
MMDT2227
Tepe Reflow Sıcaklığı (°C)
235
Voltage Collector Emitter Breakdown Max
40V 60V
Current Collector Cutoff Max
10nA ICBO
Turn On Timemax Ton
35ns
Weight
6.010099mg
Polarity
NPN, PNP
RoHS Durumu
Non-RoHS Compliant
Transistor Element Material
SILICON
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
10
JESD-609 Kodu
e0
Vce Saturation Max Ib Ic
1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Gain Bandwidth Product
300MHz
Element Configuration
Dual
Collectoremitter Breakdown Voltage
60V
Pin Sayısı
6
Yükseklik
1mm
Transition Frequency
300MHz
Collector Emitter Voltage Vceo
1V
Number Of Elements
2
Reach Svhc
No SVHC
Continuous Collector Current
600mA
Transistor Application
SWITCHING
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 10V
Kılıf / Paket
6-TSSOP, SC-88, SOT-363

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