Volume pricing
- 1+ pcs$0.11
- 10+ pcs$0.10
- 100+ pcs$0.10
- 500+ pcs$0.09
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- 2 NPN (Dual)
- Voltage Rated Dc
- 40V
- Yayın Yılı
- 2003
- Akım Değeri
- 600mA
- Uzunluk
- 2.2mm
- Collector Base Voltage Vcbo
- 75V
- Hfemin
- 100
- Terminal Kaplaması
- Matte Tin (Sn)
- Max Breakdown Voltage
- 40V
- Max Power Dissipation
- 200mW
- Genişlik
- 1.35mm
- Terminal
- SMD/SMT
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- MMDT2222A
- Turn On Timemax Ton
- 35ns
- Current Collector Cutoff Max
- 10nA ICBO
- Polarity
- NPN
- Kurşunsuz Kodu
- yes
- Weight
- 6.010099mg
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Frekans
- 300MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 40
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Vce Saturation Max Ib Ic
- 1V @ 50mA, 500mA
- Collectoremitter Saturation Voltage
- 1V
- Element Configuration
- Dual
- Gain Bandwidth Product
- 300MHz
- Pin Sayısı
- 6
- Yükseklik
- 1mm
- Collectoremitter Breakdown Voltage
- 40V
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 19 Weeks
- Collector Emitter Voltage Vceo
- 40V
- Transition Frequency
- 300MHz
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 10V
- Continuous Collector Current
- 600mA
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