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C3 ChipZentronix
IMX8-7-F

Diodes Incorporated

IMX8-7-F

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Parça Durumu
Active
Fabrika Tedarik Süresi
19 Weeks
Weight
29.993795mg
Collectoremitter Breakdown Voltage
120V
Kılıf / Paket
SOT-23-6
Akım Değeri
50mA
Transistor Element Material
SILICON
Dc Current Gain Hfe Min Ic Vce
180 @ 2mA 6V
Max Power Dissipation
300mW
Terminal Kaplaması
Matte Tin (Sn)
Çalışma Sıcaklığı
-55°C~150°C TJ
Power Dissipation
300mW
Transistor Type
2 NPN (Dual)
JESD-609 Kodu
e3
Transition Frequency
140MHz
ECCN Kodu
EAR99
Yayın Yılı
2007
Tepe Reflow Süresi (maks. sn)
40
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
RoHS Durumu
ROHS3 Compliant
Current Collector Cutoff Max
500nA ICBO
Polarity
NPN
Element Configuration
Dual
Hfemin
180
Max Collector Current
50mA
Pin Sayısı
6
Number Of Elements
2
Gain Bandwidth Product
140MHz
Max Breakdown Voltage
120V
Terminal Sayısı
6
Uzunluk
3mm
Emitter Base Voltage Vebo
5V
Yükseklik
1.1mm
Genişlik
1.6mm
Voltage Rated Dc
120V
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
120V
Terminal Formu
GULL WING

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