Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 55V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 21 Weeks
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 55V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Vgsth Max Id
- 3V @ 250μA
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 8.9nC @ 10V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current Id
- 2.6A
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Fet Type
- 2 N-Channel (Dual)
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1.7W
- Turn On Delay Time
- 3 ns
- Additional Feature
- HIGH RELIABILITY
- Terminal Sayısı
- 8
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.13Ohm
- Montaj Tipi
- Surface Mount
- Fet Feature
- Standard
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Reference Standard
- AEC-Q101
- Fall Time Typ
- 6.1 ns
- RoHS Durumu
- ROHS3 Compliant
- Pulsed Drain Currentmax Idm
- 8A
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 8
- Turn Off Delay Time
- 13.5 ns
- JESD-609 Kodu
- e3
- Rise Time
- 2.5ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 218.7pF @ 25V
- Rds On Max Id Vgs
- 130m Ω @ 3A, 10V
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