Volume pricing
- 1+ pcs$0.32
- 10+ pcs$0.30
- 100+ pcs$0.28
- 500+ pcs$0.27
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Montaj
- Surface Mount
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Max Power Dissipation
- 300mW
- Terminal Sayısı
- 6
- Collectoremitter Saturation Voltage
- -500mV
- Current Collector Cutoff Max
- 15nA ICBO
- Pin Sayısı
- 6
- Transition Frequency
- 340MHz
- Temel Parça No
- DST857BD
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fabrika Tedarik Süresi
- 15 Weeks
- Power Dissipation
- 300mW
- Polarity
- PNP
- Terminal Formu
- FLAT
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- SOT-963
- Collector Emitter Voltage Vceo
- 45V
- Continuous Collector Current
- -100mA
- Yayın Yılı
- 2012
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 100mA
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Collector Base Voltage Vcbo
- 50V
- Max Breakdown Voltage
- 45V
- Max Collector Current
- 100mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- 2 PNP (Dual)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Kaplaması
- Matte Tin (Sn)
- Collectoremitter Breakdown Voltage
- 45V
- Gain Bandwidth Product
- 340MHz
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- -5V
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