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C3 ChipZentronix
DSS5160FDB-7

Diodes Incorporated

DSS5160FDB-7

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.72
  • 10+ pcs$0.68
  • 100+ pcs$0.64
  • 500+ pcs$0.60

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RoHS

Compliant

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Specifications

Collector Emitter Voltage Vceo
550mV
Frequency Transition
65MHz
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz Kodu
yes
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2016
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Montaj
Surface Mount
Transistor Type
2 PNP (Dual)
Terminal Formu
NO LEAD
Vce Saturation Max Ib Ic
550mV @ 50mA, 1A
Case Connection
COLLECTOR
Transition Frequency
65MHz
JESD-609 Kodu
e4
Nem Hassasiyeti (MSL)
1 (Unlimited)
Configuration
SEPARATE, 2 ELEMENTS
Kılıf / Paket
6-UDFN Exposed Pad
Max Breakdown Voltage
60V
Collectoremitter Breakdown Voltage
60V
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Sayısı
6
Dc Current Gain Hfe Min Ic Vce
120 @ 500mA 2V
Transistor Element Material
SILICON
Transistor Application
SWITCHING
Max Power Dissipation
405mW
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Current Collector Cutoff Max
100nA ICBO
Power Max
405mW
Polaritychannel Type
PNP
Fabrika Tedarik Süresi
16 Weeks
Jesd30 Code
S-PDSO-N6
Number Of Elements
2
Parça Durumu
Active
Max Collector Current
1A

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