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C3 ChipZentronix
DSS4160FDB-7

Diodes Incorporated

DSS4160FDB-7

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.81
  • 10+ pcs$0.77
  • 100+ pcs$0.73
  • 500+ pcs$0.68

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RoHS

Compliant

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Specifications

Max Collector Current
1A
JESD-609 Kodu
e4
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Vce Saturation Max Ib Ic
240mV @ 50mA, 1A
Transistor Type
2 NPN (Dual)
Ambalaj
Tape & Reel (TR)
Transistor Element Material
SILICON
Kılıf / Paket
6-UDFN Exposed Pad
Current Collector Cutoff Max
100nA ICBO
Fabrika Tedarik Süresi
16 Weeks
Power Max
405mW
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Collectoremitter Breakdown Voltage
60V
Montaj
Surface Mount
Yayın Yılı
2016
Transistor Application
SWITCHING
Max Power Dissipation
405mW
Terminal Formu
NO LEAD
Case Connection
COLLECTOR
Terminal Sayısı
6
Jesd30 Code
S-PDSO-N6
Number Of Elements
2
Kurşunsuz Kodu
yes
Parça Durumu
Active
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Dc Current Gain Hfe Min Ic Vce
150 @ 500mA 2V
Frequency Transition
175MHz
Max Breakdown Voltage
60V
Montaj Tipi
Surface Mount
Transition Frequency
175MHz
Configuration
SEPARATE, 2 ELEMENTS
Çalışma Sıcaklığı
-55°C~150°C TJ
Polaritychannel Type
NPN
Collector Emitter Voltage Vceo
240mV

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