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DN0150ADJ-7

Diodes Incorporated

DN0150ADJ-7

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.19
  • 10+ pcs$0.18
  • 100+ pcs$0.17
  • 500+ pcs$0.16

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RoHS

Compliant

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Specifications

Number Of Elements
2
Collector Emitter Voltage Vceo
50V
RoHS Durumu
ROHS3 Compliant
Element Configuration
Dual
Kılıf / Paket
SOT-963
Transistor Type
2 NPN (Dual)
Transition Frequency
60MHz
JESD-609 Kodu
e3
Terminal Sayısı
6
Tepe Reflow Süresi (maks. sn)
40
Ambalaj
Tape & Reel (TR)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2009
Parça Durumu
Active
Pin Sayısı
6
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Çalışma Sıcaklığı
-55°C~150°C TJ
Max Breakdown Voltage
50V
Transistor Element Material
SILICON
Emitter Base Voltage Vebo
5V
ECCN Kodu
EAR99
Reach Svhc
No SVHC
Radyasyon Dayanımı
No
Max Collector Current
100mA
Gain Bandwidth Product
60MHz
Terminal Formu
FLAT
Terminal Kaplaması
Matte Tin (Sn)
Current Collector Cutoff Max
100nA ICBO
Collector Base Voltage Vcbo
60V
Polarity
NPN
Yükseklik
450μm
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Kurşunsuz Kodu
yes
Power Max
300mW
Fabrika Tedarik Süresi
15 Weeks
Tepe Reflow Sıcaklığı (°C)
260
Collectoremitter Breakdown Voltage
50V
Pin Sayısı
6

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