DMTH6010LPDQ-13

Specifications

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

2615pF @ 30V

Case Connection

DRAIN

Drainsource On Resistancemax

0.016Ohm

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V

Montaj

Surface Mount

Avalanche Energy Rating Eas

20 mJ

Pin Sayısı

8

Fabrika Tedarik Süresi

23 Weeks

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101

Terminal Formu

FLAT

Kılıf / Paket

8-PowerTDFN

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Terminal Kaplaması

Matte Tin (Sn)

Continuous Drain Current Id

47.6A

Drain Currentmax Abs Id

13.1A

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Pulsed Drain Currentmax Idm

90A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

3V @ 250μA

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Parça Durumu

Active

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yayın Yılı

2016

Max Power Dissipation

2.8W

Fet Feature

Standard

Jesd30 Code

R-PDSO-F6

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

13.1A Ta 47.6A Tc

Rds On Max Id Vgs

11m Ω @ 20A, 10V

Fet Type

2 N-Channel (Dual)