DMTH10H017LPD-13

Specifications

Minimum Operating Temperature

- 55 C

Configuration

Dual

Pd Power Dissipation

2.6 W

Id Continuous Drain Current

59 A

Transistor Polarity

N Channel

Vgs Th Gatesource Threshold Voltage

3 V

Fabrika Paket Adedi

2500

Msl

MSL 1 - Unlimited

Kılıf / Paket

8-PowerTDFN

Ürün Durumu

Active

Ambalaj

Cut Tape

Technology

Si

Rise Time

16.3 ns

Input Capacitance Ciss Max Vds

1986pF @ 50V

Typical Turnoff Delay Time

32.6 ns

Ürün Tipi

MOSFET

Number Of Channels

2 Channel

Rds On Drainsource Resistance

17.4 mOhms

Birim Ağırlık

0.003422 oz

Drain To Source Voltage Vdss

100V

Temel Ürün No

DMTH10H017

Channel Type

N Channel

Channel Mode

Enhancement

Transistor Type

2 N-Channel

Paket

Tape & Reel (TR)

Qg Gate Charge

28.6 nC

Montaj Tipi

Surface Mount

Fet Feature

Standard

Gate Charge Qg Max Vgs

28.6nC @ 10V

Current Continuous Drain Id25

59A (Tc)

Rds On Max Id Vgs

17.4mOhm @ 17A, 10V

Fet Type

2 N-Channel (Dual)

Vgs Gatesource Voltage

- 20 V, + 20 V

Montaj Stili

SMD/SMT

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Typical Turnon Delay Time

9.8 ns

Continuous Drain Current Id

59A

Maks. Çalışma Sıcaklığı

+ 175 C

Vds Drainsource Breakdown Voltage

100 V

Power Max

2.6W (Ta), 93W (Tc)