Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Drainsource On Resistancemax
- 0.015Ohm
- Input Capacitance Ciss Max Vds
- 1932pF @ 15V
- Weight
- 73.992255mg
- Power Dissipation
- 1.19W
- Terminal Formu
- GULL WING
- Number Of Channels
- 2
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 9A
- Fet Type
- 2 N-Channel (Dual)
- Terminal Kaplaması
- Matte Tin (Sn)
- Current Continuous Drain Id25
- 7A 5.7A
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Continuous Drain Current Id
- 7A
- Nominal Vgs
- 2.4 V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 2.4V @ 250μA
- Max Power Dissipation
- 1.19W
- Terminal Sayısı
- 8
- Element Configuration
- Dual
- Additional Feature
- HIGH RELIABILITY
- Pin Sayısı
- 8
- Yayın Yılı
- 2010
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Polarity
- NPN
- Drain To Source Breakdown Voltage
- 30V
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