Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Power Max
- 1.2W
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Terminal Sayısı
- 8
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Gate Charge Qg Max Vgs
- 17.2nC @ 10V
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 1.2W
- Fabrika Tedarik Süresi
- 18 Weeks
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- YES
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
- Drainsource On Resistancemax
- 0.105Ohm
- Vgsth Max Id
- 3V @ 250μA
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Continuous Drain Current Id
- 3.3A
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 60V
- Drain To Source Voltage Vdss
- 60V
- Pin Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 105m Ω @ 4.5A, 10V
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 969pF @ 30V
- Fet Type
- 2 P-Channel (Dual)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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