Volume pricing
- 1+ pcs$0.09
- 10+ pcs$0.09
- 100+ pcs$0.08
- 500+ pcs$0.08
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 8 Ω @ 100mA, 5V
- Weight
- 3.005049mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Input Capacitance Ciss Max Vds
- 27pF @ 25V
- Additional Feature
- HIGH RELIABILITY
- JESD-609 Kodu
- e3
- Power Dissipation
- 400mW
- Fet Type
- 2 P-Channel (Dual)
- Tepe Reflow Süresi (maks. sn)
- 40
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pin Sayısı
- 6
- Kurşunsuz Kodu
- yes
- Ds Breakdown Voltagemin
- 50V
- Continuous Drain Current Id
- 160mA
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Voltage Vdss
- 50V
- Montaj
- Surface Mount
- Kılıf / Paket
- SOT-563, SOT-666
- Pin Sayısı
- 6
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 600μm
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Feature
- Logic Level Gate
- Direnç
- 8Ohm
- Vgsth Max Id
- 2.1V @ 250μA
- Uzunluk
- 1.6mm
- Transistor Element Material
- SILICON
- Element Configuration
- Dual
- Number Of Elements
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application
- SWITCHING
- Terminal Formu
- FLAT
- Operating Mode
- ENHANCEMENT MODE
- Terminal Sayısı
- 6
- Yayın Yılı
- 2009
- Montaj Tipi
- Surface Mount
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