Volume pricing
- 1+ pcs$0.33
- 10+ pcs$0.31
- 100+ pcs$0.29
- 500+ pcs$0.27
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 73.992255mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 30V
- Rds On Max Id Vgs
- 65m Ω @ 5A, 10V
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 336pF @ 25V
- Additional Feature
- HIGH RELIABILITY
- Turn Off Delay Time
- 17.6 ns
- Power Dissipation
- 1.8W
- Fet Type
- 2 P-Channel (Dual)
- Tepe Reflow Süresi (maks. sn)
- 40
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 4.4A
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Voltage Vdss
- 30V
- Pin Sayısı
- 8
- Fall Time Typ
- 5 ns
- Montaj
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 1.5mm
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 0.065Ohm
- Terminal Kaplaması
- Matte Tin (Sn)
- Rise Time
- 5ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Uzunluk
- 5.3mm
- Vgsth Max Id
- 2.1V @ 250μA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Terminal Sayısı
- 8
- Yayın Yılı
- 2008
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
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