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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn Off Delay Time
- 31 ns
- Input Capacitance Ciss Max Vds
- 563pF @ 25V
- JESD-609 Kodu
- e3
- Fet Type
- 2 P-Channel (Dual)
- Continuous Drain Current Id
- -3.9A
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 14.6 ns
- Current Continuous Drain Id25
- 3.9A
- Yükseklik
- 1.7mm
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2013
- Genişlik
- 3.95mm
- Ambalaj
- Digi-Reel®
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- -30V
- Rds On Max Id Vgs
- 70m Ω @ 5.3A, 10V
- Max Junction Temperature Tj
- 150°C
- Reference Standard
- AEC-Q101
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation
- 1.1W
- Number Of Channels
- 2
- Tepe Reflow Süresi (maks. sn)
- 30
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drain To Source Voltage Vdss
- 30V
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Rise Time
- 5ns
- Drainsource On Resistancemax
- 0.07Ohm
- Fet Feature
- Logic Level Gate
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