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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Terminal Sayısı
- 8
- Power Max
- 1.7W
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Fabrika Tedarik Süresi
- 17 Weeks
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 13.5nC @ 4.5V
- Drainsource On Resistancemax
- 0.048Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Feature
- Standard
- Yüzey Montaj
- YES
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 4.8A Ta
- Vgsth Max Id
- 1.3V @ 250μA
- Jesd30 Code
- R-PDSO-G8
- Ds Breakdown Voltagemin
- 30V
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 4.8A
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 30V
- Additional Feature
- HIGH RELIABILITY
- Input Capacitance Ciss Max Vds
- 1438pF @ 15V
- JESD-609 Kodu
- e3
- Rds On Max Id Vgs
- 48m Ω @ 5A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Reference Standard
- AEC-Q101
- Tepe Reflow Süresi (maks. sn)
- 30
- Fet Type
- 2 P-Channel (Dual)
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