Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 88ns
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 1.2V @ 250μA
- Terminal Sayısı
- 6
- Yayın Yılı
- 2015
- Operating Mode
- DUAL GATE, ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Contact Plating
- Tin
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 15 Weeks
- Turn On Delay Time
- 9.8 ns
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 2.1nC @ 4.5V
- Max Power Dissipation
- 450mW
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 24.4 ns
- Input Capacitance Ciss Max Vds
- 184pF @ 10V
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 260m Ω @ 880mA, 4.5V
- Tepe Reflow Süresi (maks. sn)
- 30
- Fet Type
- 2 P-Channel (Dual)
- Drain Currentmax Abs Id
- 0.9A
- Continuous Drain Current Id
- 900mA
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 45 ns
- Pin Sayısı
- 6
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 8V
- Drain To Source Voltage Vdss
- 20V
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