Volume pricing
- 1+ pcs$0.14
- 10+ pcs$0.13
- 100+ pcs$0.13
- 500+ pcs$0.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 2.1nC @ 4.5V
- Max Power Dissipation
- 450mW
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 15 Weeks
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Max
- 450mW
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2015
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Operating Mode
- DUAL GATE, ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Jesd30 Code
- R-PDSO-G6
- Vgsth Max Id
- 1.2V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Standard
- Drainsource On Resistancemax
- 0.26Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
- Drain To Source Voltage Vdss
- 20V
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Continuous Drain Current Id
- 900mA
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 0.9A
- Ds Breakdown Voltagemin
- 20V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Type
- 2 P-Channel (Dual)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 260m Ω @ 880mA, 4.5V
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 184pF @ 10V
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