DMP2160UFDBQ-7

Specifications

Input Capacitance Ciss Max Vds

536pF @ 10V

Additional Feature

HIGH RELIABILITY

JESD-609 Kodu

e4

Rds On Max Id Vgs

70m Ω @ 2.8A, 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Reference Standard

AEC-Q101

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Ds Breakdown Voltagemin

20V

Continuous Drain Current Id

3.8A

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Kılıf / Paket

6-UDFN Exposed Pad

Drain To Source Voltage Vdss

20V

Drainsource On Resistancemax

0.07Ohm

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Feature

Standard

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

900mV @ 250μA

Jesd30 Code

S-PDSO-N6

Transistor Application

SWITCHING

Terminal Formu

NO LEAD

Pulsed Drain Currentmax Idm

13A

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Yayın Yılı

2014

Transistor Element Material

SILICON

Power Max

1.4W

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

15 Weeks

Montaj Tipi

Surface Mount

Max Power Dissipation

1.4W

Gate Charge Qg Max Vgs

6.5nC @ 4.5V