Volume pricing
- 1+ pcs$0.23
- 10+ pcs$0.22
- 100+ pcs$0.21
- 500+ pcs$0.20
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yükseklik
- 750μm
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Genişlik
- 2mm
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2012
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 13A
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Fet Type
- 2 P-Channel (Dual)
- JESD-609 Kodu
- e4
- Turn Off Delay Time
- 55.34 ns
- Input Capacitance Ciss Max Vds
- 536pF @ 10V
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 12.09 ns
- Gate To Source Voltage Vgs
- 12V
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 3.8A
- Uzunluk
- 2mm
- Vgsth Max Id
- 900mV @ 250μA
- Fet Feature
- Logic Level Gate
- Rise Time
- 12.09ns
- Drainsource On Resistancemax
- 0.07Ohm
- Fabrika Tedarik Süresi
- 6 Weeks
- Turn On Delay Time
- 11.51 ns
- Gate Charge Qg Max Vgs
- 6.5nC @ 4.5V
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 1.4W
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 6
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration
- Dual
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 1.4W
- Additional Feature
- HIGH RELIABILITY
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