Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 7ns
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drainsource On Resistancemax
- 0.0175Ohm
- Fet Feature
- Logic Level Gate
- Terminal Pozisyonu
- BOTTOM
- Vgsth Max Id
- 900mV @ 250μA
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Formu
- BALL
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2014
- Terminal Sayısı
- 9
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 800mW
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 4.2nC @ 4.5V
- Turn On Delay Time
- 8.5 ns
- Ambalaj
- Cut Tape (CT)
- Fabrika Tedarik Süresi
- 7 Weeks
- Rds On Max Id Vgs
- 100m Ω @ 1A, 4.5V
- Drain To Source Breakdown Voltage
- -20V
- Reference Standard
- AEC-Q101
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn Off Delay Time
- 47 ns
- Additional Feature
- HIGH RELIABILITY
- Input Capacitance Ciss Max Vds
- 310pF @ 10V
- JESD-609 Kodu
- e1
- Number Of Channels
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Fet Type
- 2 P-Channel (Dual) Common Source
- Tepe Reflow Sıcaklığı (°C)
- 260
- Feedback Capmax Crss
- 55 pF
- Kurşunsuz Kodu
- yes
- Drain Currentmax Abs Id
- 3A
- Continuous Drain Current Id
- 3A
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