Volume pricing
- 1+ pcs$0.98
- 10+ pcs$0.93
- 100+ pcs$0.87
- 500+ pcs$0.82
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ds Breakdown Voltagemin
- 20V
- Continuous Drain Current Id
- 3.2A
- ECCN Kodu
- EAR99
- Drain To Source Voltage Vdss
- 20V
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 90m Ω @ 2.9A, 4.5V
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 881pF @ 10V
- JESD-609 Kodu
- e4
- Case Connection
- DRAIN
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Type
- 2 P-Channel (Dual)
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Power Max
- 1.4W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Formu
- NO LEAD
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2015
- Terminal Sayısı
- 6
- Max Power Dissipation
- 1.4W
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 18nC @ 8V
- Ambalaj
- Tape & Reel (TR)
- Fabrika Tedarik Süresi
- 6 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.09Ohm
- Fet Feature
- Standard
- Jesd30 Code
- S-PDSO-N6
- Vgsth Max Id
- 1.4V @ 250μA
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