Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 94.1 ns
- Montaj
- Surface Mount
- Fall Time Typ
- 42.4 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Feature
- Logic Level Gate
- Rds On Max Id Vgs
- 35m Ω @ 4A, 4.5V
- Terminal Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 1610pF @ 10V
- Reach Svhc
- No SVHC
- Rise Time
- 12.4ns
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2010
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 16.8 ns
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 8V
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Drainsource On Resistancemax
- 0.045Ohm
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 15.4nC @ 4.5V
- Fet Type
- 2 P-Channel (Dual) Common Drain
- Weight
- 157.991892mg
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 6.04A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 15 Weeks
- Max Power Dissipation
- 890mW
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- -20V
- Power Dissipation
- 890mW
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