Volume pricing
- 1+ pcs$0.85
- 10+ pcs$0.80
- 100+ pcs$0.76
- 500+ pcs$0.71
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Drain Currentmax Abs Id
- 0.55A
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Feature
- Logic Level Gate
- Additional Feature
- HIGH RELIABILITY
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 175pF @ 16V
- Rds On Max Id Vgs
- 900m Ω @ 430mA, 4.5V
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2011
- Gate To Source Voltage Vgs
- 8V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 1.1mm
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Parça Durumu
- Active
- Pin Sayısı
- 6
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- SOT-23-6
- Uzunluk
- 3mm
- Drainsource On Resistancemax
- 0.9Ohm
- Genişlik
- 1.6mm
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- 2 P-Channel (Dual)
- Continuous Drain Current Id
- 550mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 20V
- Tepe Reflow Süresi (maks. sn)
- 40
- Number Of Channels
- 2
- Drain To Source Breakdown Voltage
- -20V
- Number Of Elements
- 2
- Max Power Dissipation
- 500mW
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