Volume pricing
- 1+ pcs$0.39
- 10+ pcs$0.37
- 100+ pcs$0.35
- 500+ pcs$0.33
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2015
- Turn On Delay Time
- 5.7 ns
- Input Capacitance Ciss Max Vds
- 915pF @ 6V
- Rds On Max Id Vgs
- 61m Ω @ 3.6A, 4.5V
- Terminal Sayısı
- 6
- Rise Time
- 11.5ns
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 8V
- Montaj
- Surface Mount
- Turn Off Delay Time
- 27.8 ns
- Fet Feature
- Standard
- Fall Time Typ
- 26.4 ns
- Fabrika Tedarik Süresi
- 15 Weeks
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 12V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Max Power Dissipation
- 1.4W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e4
- Terminal Formu
- NO LEAD
- Ds Breakdown Voltagemin
- 12V
- Vgsth Max Id
- 1V @ 250μA
- Contact Plating
- Gold
- Pin Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 17.9nC @ 8V
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Continuous Drain Current Id
- 3.8A
- Fet Type
- 2 P-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
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