DMNH6042SSDQ-13

Specifications

Vgsth Max Id

3V @ 250μA

Ds Breakdown Voltagemin

60V

Seri

Automotive, AEC-Q101

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Avalanche Energy Rating Eas

65 mJ

Fet Type

2 N-Channel (Dual)

Power Max

2.1W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drainsource On Resistancemax

0.05Ohm

Parça Durumu

Active

Gate Charge Qg Max Vgs

4.2nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

35A

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

16.7A Tc

Terminal Sayısı

8

Rds On Max Id Vgs

50m Ω @ 5.1A, 10V

Input Capacitance Ciss Max Vds

584pF @ 25V

Yüzey Montaj

YES

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2016

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

5.3A

Fet Feature

Standard