DMNH6022SSD-13

Specifications

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

7.1A 22.6A

Input Capacitance Ciss Max Vds

2127pF @ 25V

Rds On Max Id Vgs

27m Ω @ 5A, 10V

Terminal Sayısı

8

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2016

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Drain Currentmax Abs Id

7.1A

Terminal Kaplaması

Matte Tin (Sn)

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Max Power Dissipation

1.5W

Drain To Source Voltage Vdss

60V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

3V @ 250μA

Seri

Automotive, AEC-Q101

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.03Ohm

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Gate Charge Qg Max Vgs

32nC @ 10V

Pulsed Drain Currentmax Idm

45A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Avalanche Energy Rating Eas

24 mJ

Fet Type

2 N-Channel (Dual)