DMNH6021SPD-13

Specifications

Fabrika Tedarik Süresi

17 Weeks

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Max Power Dissipation

1.5W

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Formu

FLAT

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

60V

Seri

Automotive, AEC-Q101

Vgsth Max Id

3V @ 250μA

Pin Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

20.1nC @ 10V

Parça Durumu

Active

Drainsource On Resistancemax

0.025Ohm

Kılıf / Paket

8-PowerTDFN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

32A

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

64 mJ

Jesd30 Code

R-PDSO-F6

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2016

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

25m Ω @ 15A, 10V

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

1143pF @ 25V

Current Continuous Drain Id25

8.2A 32A

Additional Feature

HIGH RELIABILITY

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Fet Feature

Standard